Dielectric properties and electrical conductivity of FeGa0.8In1.2Se4 crystals on alternating current

Editorial Board PCSS Journal; Н.Н. Ніфтієв; Ф.М. Маммадов; А.Н. Азізова; Х.Х. Гашимов; М.Б. Бабанли

doi:10.15330/pcss.27.1.152-157

Автор(и)

Н.Н. Ніфтієв Азербайджанський державний педагогічний університет, Баку, Азербайджан
Ф.М. Маммадов Азербайджанський державний педагогічний університет, Баку, Азербайджан; Інститут каталізу та неорганічної хімії, Баку, Азербайджан https://orcid.org/0000-0003-3317-7438
А.Н. Азізова Азербайджанський медичний університет, Баку, Азербайджан
Х.Х. Гашимов Азербайджанський державний університет нафти і промисловості, Баку, Азербайджан
М.Б. Бабанли Інститут каталізу та неорганічної хімії, Баку, Азербайджан

DOI:

https://doi.org/10.15330/pcss.27.1.152-157

Ключові слова:

кристал, діелектрична проникність, електропровідність, розсіювання, частота, температура, стрибковий механізм, енергія активації

Анотація

Досліджено діелектричну проникність і електропровідність змінного струму кристала FeGa₀.₈In₁.₂Se₄ у широких діапазонах частот і температур. Встановлено, що дійсна та уявна частини діелектричної проникності демонструють значну дисперсію релаксаційного характеру. У температурному інтервалі 295–358 K та частотному діапазоні 2 × 10⁴–10⁶ Гц електропровідність підпорядковується степеневій залежності σ(ω) ∝ ωˢ (0.1 ≤ s ≤ 1.0). Виявлені частотні та температурні залежності узгоджуються з термічно активованим стрибковим механізмом провідності. Енергію активації носіїв заряду в кристалі FeGa₀.₈In₁.₂Se₄ визначено з температурної залежності електропровідності.

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