Design of SOI transistors taking into account the influence of a floating body and a controlled base

Editorial Board PCSS Journal; Taras Benko

doi:10.15330/pcss.26.2.442-446

Authors

Taras Benko Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine

DOI:

https://doi.org/10.15330/pcss.26.2.442-446

Keywords:

MOS transistor, SOI, floating body, subchannel region, signal

Abstract

The paper proposes an alternative technology that uses a transistor body modification, whereby a larger modification provides increased device current during switching, while the slope reduces leakage current during storage. The body influencing methods improved performance, especially in the low voltage range.

A technology has been developed that can be used to address low voltage operation without any loss in speed or increase in source leakage. Alternatively, it can be used to speed up the operation of the circuit without any increase in power consumption. The proposed structure starts with an n-gate MOSFB, which is particularly attractive and widely used with SOI substrate technology. Unlike the conventional, source-bound layout style, the n-gate layout style uses polysilicon gate extensions, parallel, on both sides of the channel, to create an isolated contact between the element surfaces.

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