Короткий порівняльний аналіз перспектив використання тривимірних FIN FET-транзисторів для сенсорної електроніки

Editorial Board PCSS Journal; I. Kohut; O. Samarchuk

doi:10.15330/pcss.26.3.473-479

Authors

I. Kohut Vasyl Stefanyk Carpathian National University, Ivano-Frankivsk, Ukraine
O. Samarchuk Vasyl Stefanyk Carpathian National University, Ivano-Frankivsk, Ukraine

DOI:

https://doi.org/10.15330/pcss.26.3.473-479

Keywords:

sensor electronics, nanometer structures , silicon nanowires, FinFET

Abstract

The development of modern electronics is based on the introduction of modern micro- and nanoelectronic technologies. Traditional complementary metal-oxide-semiconductor (CMOS) planar transistor structures based on bulk silicon are gradually giving way to more advanced structures with better electrical, frequency, energy characteristics, and radiation resistance based on three-dimensional (3D) "silicon-on-insulator" structures that provide better electrical characteristics, higher speed, energy efficiency with the possibility of further scaling. Promising areas of use for both traditional microcircuits and sensor electronics are the use of 3D nanometer transistors of the FinFET, Gate-All-Around (GAA) type, as well as those based on nanosheets (Nano-sheet) and nanowires (Nanowire). The paper considers the structures of such types of SOI nanometer 3D transistors and examples of their use in sensor electronics.

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