Faraday Effect in ZnSe Crystals Doped with Transition Metals

Editorial Board PCSS Journal; O.V. Kinzerska; M.M. Slyotov; T.M. Mazur; O.M. Slyotov; M.P. Mazur

doi:10.15330/pcss.27.3.505-509

Authors

O.V. Kinzerska Yuri Fedkovich Сhernivtsi National University, Chernivtsi, Ukraine
M.M. Slyotov Yuri Fedkovich Сhernivtsi National University, Chernivtsi, Ukraine
T.M. Mazur Ivano-Frankivsk National Technical University of Oil and Gas, Ivano-Frankivsk, Ukraine
O.M. Slyotov Yuri Fedkovich Сhernivtsi National University, Chernivtsi, Ukraine
M.P. Mazur Ivano-Frankivsk National Technical University of Oil and Gas, Ivano-Frankivsk, Ukraine

DOI:

https://doi.org/10.15330/pcss.27.3.505-509

Keywords:

zinc selenide, 3D impurities, Faraday effect, Verde constant, magnetic properties

Abstract

The Faraday effect in zinc selenide crystals doped with transition metal impurities has been investigated. It has been established that magnetic impurities cause the formation of right- and left-handed components of circular polarisation of radiation due to the interaction of charge carriers with ions of the crystal lattice. In a longitudinal magnetic field, this leads to the appearance of different spectral components of radiation and the rotation of the plane of polarisation of light. The dispersion dependencies of the Verdet constant for the studied samples were determined. It has been shown that doping ZnSe base substrates with Mn and Co impurities leads to the formation of a paramagnetic state, while Fe impurities cause the appearance of ferromagnetic properties in the material.

References

A. Sadao, Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors. (New Jersey: Wiley, 2009).

O. Ermakov, Applied Optoelectronics. (M.: Tekhnosfera, 416, 2004).

B. Dzundza, & all, Software and Hardware Complex for Study of Photoelectric Properties of Semiconductor Structures, IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO), Kyiv, 635 (2019); https://doi.org/10.1109/ELNANO.2019.8783544.

A.N. Georgobiani, M.K. Sheinkman, Physics of A2B6 compounds. (M. Mir, 320, 1986).

B.M. Bullah, P.P. Gorbik, M.K. Komashchenko, Heterostructures of solid-phase substitution based on single crystals of A2B6 compounds, FTP, 15(2), 357 (1981).

O.V. Kinzerska, I.M. Senko, M.M. Slyotov, O.M. Slyotov, T.M. Mazur, Features of the management of the rule of Urbakh in ZnSe:Yb crystals, Physics and Chemistry of Solid State, 24(3), 495 (2023); https://doi.org/10.15330/pcss.24.3.495-498.

V.I. Fistul, Physics and Chemistry of Solids. (M.: Metallurgy, V.2, 320, 1995).

M.М. Slyotov, T.М. Mazur, V. V. Prokopiv, O.М. Slyotov, M.Р. Mazur, Sources of optical radiation based on ZnTe/ZnSe/ZnS heterostructures, Materials Today: Proceedings, 62, 5763 (2022); https://doi.org/10.1016/j.matpr.2022.03.476.

V.P. Gribkovsky, The theory of absorption and emission of light in semiconductors (Science and technology, Minsk, 464, 1975).

T.M. Mazur, M.M. Slyotov, V.V. Prokopiv, O.M. Slyotov, M.P. Mazur, Light emitters based on II-VI chalcogenides with nanostructured surface, Molecular Crystals and Liquid Crystals, 752(1), 95 (2023); https://doi.org/10.1080/15421406.2022.2091276.

I. V. Horichok, L. I. Nykyruy, T. O. Parashchuk, S. D. Bardashevska, & M. P. Pylyponuk, Thermodynamics of defect subsystem in zinc telluride crystals. Modern Physics Letters B, 30(16), 1650172 (2016); https://doi.org/10.1142/S0217984916501724.

G. Wisz, P. Sawicka-Chudy, A. Wal, M. Sibiński, P. Potera, R., Yavorskyi, ... & O. M. Chernikova, Structure defects and photovoltaic properties of TiO2:ZnO/CuO solar cells prepared by reactive DC magnetron sputtering, Applied Sciences, 13(6), 3613 (2023); https://doi.org/10.3390/app13063613.

I.V. Tkachenko, Mechanisms of Defect Formation and Luminescence in Undoped and Tellurium-Doped Zinc Selenide Crystals. PhD Thesis (Physics and Mathematics), Specialty 01.04.10. Chernivtsi, 136, 2005.

Yu.V. Vorobyev, V.I. Dobrovolskiy, V.I. Strikha, Methods of semiconductor research. (K.: Higher School; 288, 1988).

V.P. Makhnii, O.V. Kinzerska, K.S. Ulianytskyi, Method for Doping Zinc Selenide with Transition Metal Impurities. Patent of Ukraine No. 46928, IPC C30B31/00. Applicant and patent holder: Yuriy Fedkovych Chernivtsi National University. Application No. u200907592, filed July 20, 2009; published January 11, Bulletin No. 1, 2010.

T.M. Mazur, M.M. Slyotov, O.M. Slyotov, M.P. Mazur, Light emitters based on ZnSe, Low Temperature Physics, 51(2), 256 (2025). https://doi.org/10.1063/10.0035413.

V.I. Fistul, Atoms of Doping Impurities in Semiconductors. (M.: Fizmatlit, 432, 2004).

O.V. Kinzerska, Physical Properties of Zinc Selenide Crystals Doped with Transition Metals. PhD Thesis (Physics and Mathematics), Specialty 01.04.10. Yuriy Fedkovych Chernivtsi National University, Chernivtsi, 137, (2012).

V.I. Gavrilenko, A.M. Grekhov, D.V. Korbutyak, V.G. Litovchenko, Optical properties of semiconductors. Reference book. (K.: Naukova dumka, 608, 1987).

P.Yu., M. Kardona, Fundamentals of Semiconductor Physics. (M: Fizmatlit, 560, 2002).

P.I. Nikitin, A.I. Savchuk, Faraday Effect in Semimagnetic Semiconductors, Physics-Successes, 160(11), 167 (1990).

A.M. Ermolaev, G I. Rashba, Faraday Effect in Conductors with Magnetic-Impurity Electron States, Low Temperature Physics, 23(11), 1211 (1997).