The Luminescent Centra in thin Films of β–Ga2O3 and (Y0.06Ga0.94)2O3

  • O.M. Bordun Ivan Franko National University of Lviv
  • B.O. Bordun Ivan Franko Lviv National University
  • I.Yo. Kukharskyy Ivan Franko Lviv National University
  • I.I. Medvid Ivan Franko Lviv National University
Keywords: gallium oxide, yttrium oxide, thin film, photoluminescence

Abstract

Photoexcitation and photoluminescence spectra of b–Ga2O3 and (Y0.06Ga0.94)2O3 thin films obtained by high-frequency ion-plasmous sputtering was investigated. Luminescence spectra were factorized on ultimate constituents using Alentsev-Fock method. The nature of two intensive luminescent band with maxima in region 3.00 and 3.15 eV and two faint intensive luminescent band with maxima in region 4.00 and 4.25 eV was discussion. Luminescence decay time for band with maximum in region 3.00 and 3.15 eV in different types of b–Ga2O3 and (Y0.06Ga0.94)2O3 thin films was established.

References

[1] K. Matsuzaki, H. Yanagi, T. Kamiya, H. Hiramatsu, K. Nomura, M. Hirano, H. Hosono, Appl. Phys. Lett. 88 (9), 092106 (2006).
[2] N. D. Cuong, Y. W. Park, S. G. Yoon, Sens. Actuat. B 140(1), 240 (2009).
[3] M. Orita, H. Ohta, M. Hirano, H. Hosono, Appl. Phys. Lett. 77(25), 4166 (2000).
[4] J.-G. Zhao, Z.-X. Zhang, Z.-W. Ma, H.-G. Duan, X.-S. Guo, E.-Q. Xie, Chinese Phys. Lett. 25(10), 3787 (2008).
[5] Y. Tokida, S. Adachi, Jpn. J. Appl. Phys. 52 (10R), 101102 (2013).
[6] P. Wellenius, A. Suresh, J. V. Foreman, H. O. Everitt, J. F. Muth, Mater. Sci. Eng. B 146, 252 (2008).
[7] T. Minami, T. Shirai, T. Nakatani, T. Miyata, Jpn. J. Appl. Phys. 39 (6A), L524 (2000).
[8] K. Mishra, Y. Dwivedi, S. B. Rai, Appl. Phys. B 106 (1), 101 (2012).
[9] C. Shang, X. Shang, Y. Qu, M. Li, Chem. Phys. Lett. 501 (4-6), 480 (2011).
[10] T. Onuma, S. Fujioka, T. Yamaguchi, M. Higashiwaki, K. Sasaki, T. Masui, T. Honda, Appl. Phys. Lett. 103, 041910 (2013).
[11] O. M. Bordun, І. J. Kuhars'kij, B. O. Bordun, V. B. Lushhanec', Physics and Chemistry of Solid State 16 (2), 302 (2015).
[12] M. V. Fok, Tr. FIAN 59, 3 (1972).
[13] N. Ueda, H. Hosono, R. Waseda, H. Kawazoe, Appl. Phys. Lett. 70, 3561 (1997).
[14] Ch. B. Lushhik, A. Ch. Lushhik, Raspad jelektronnyh vozbuzhdenij s obrazovaniem defektov v tverdyh telah (Nauka, Moskva, 1989).
[15] T. Harwig, F. Kellendonk, J. Solid State Chem. 24 (3-4), 255(1978).
[16] L. Binet, D. Gourier, J. Phys. Chem. Solids 59 (8), 1241 (1998).
[17] K. Shimamura, E. G. Villora, T. Ujiie, K. Aoki, Appl. Phys. Lett. 92(20), 201914 (2008).
[18] T. P. Peka, V. F. Kovalenko, V. N. Kucenko, Ljuminescentnye metody kontrolja parametrov poluprovodnikovyh materialov i priborov (Tehnika, Kiev, 1986).
[19] S.-A. Lee, S.-Y. Jeong, J.-Y. Hwang, J.-P. Kim, M.-G. Ha, C.-R. Cho, Integr. Ferroelectr. 74(1), 173 (2005).
[20] B. Liu, M. Gu, X. Liu, Appl. Phys. Lett. 91(17), 172102 (2007).
[21] M. Mohamed, C. Janowtz, I. Unger, R. Manzke, Z. Galazka, R. Uecker, R. Formari, J. R. Weber, J. B. Varley, C. G. Van der Walle, Appl. Phys. Lett. 97(21), 211903 (2010).
[22] L. Binet, D. Gourier, Appl. Phys. Lett. 77(8), 1138 (2000).
[23] J. Zhang, B. Li, C. Xia, G. Pei, Q. Deng, Z. Yang, W. Xu, H. Shi, F. Wu, Y. Wu, J. Xu, J. Phys. Chem. Solids 67 (12), 2448 (2006).
Published
2016-03-15
How to Cite
BordunO., BordunB., KukharskyyI., & MedvidI. (2016). The Luminescent Centra in thin Films of β–Ga2O3 and (Y0.06Ga0.94)2O3. Physics and Chemistry of Solid State, 17(1), 53-59. https://doi.org/10.15330/pcss.17.1.53-59
Section
Scientific articles

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