Luminescence of Cr-doped β-Ga2O3 thin films

O.M. Bordun; B.O. Bordun; I.Yo. Kukharskyy; D.M. Maksymchuk; I.I. Medvid

doi:10.15330/pcss.24.3.490-494

Authors

O.M. Bordun Ivan Franko National University of Lviv, Lviv, Ukraine
B.O. Bordun Ivan Franko National University of Lviv, Lviv, Ukraine
I.Yo. Kukharskyy Ivan Franko National University of Lviv, Lviv, Ukraine
D.M. Maksymchuk Ivan Franko National University of Lviv, Lviv, Ukraine
I.I. Medvid Ivan Franko National University of Lviv, Lviv, Ukraine

DOI:

https://doi.org/10.15330/pcss.24.3.490-494

Keywords:

gallium oxide, activator, thin films, photoluminescence, cathodoluminescence

Abstract

The results of investigation of optical excitation, photoluminescence (PL) and cathodoluminescence (CL) spectra in Cr-doped β-Ga₂O₃ thin films are presented. The broad bands due to the generation of electron-hole pairs and transitions from the ⁴А₂ ground level to the ⁴Т₁ and ⁴Т₂ excited states in Cr³⁺ ions are observed in the photoexcitation spectra. The R-lines and phonon repetitions of R-lines are observed on the luminescence spectra against the background of a broad structureless band with a maximum around 700 nm, caused by the ⁴T₂ – ⁴A₂ transitions in Cr³⁺ ions. The crystal field force Dq was determined and the Stokes and anti-Stokes repetitions of R-lines were interpreted.

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