Luminescence of Cr-doped β-Ga2O3 thin films

  • O.M. Bordun Ivan Franko National University of Lviv, Lviv, Ukraine
  • B.O. Bordun Ivan Franko National University of Lviv, Lviv, Ukraine
  • I.Yo. Kukharskyy Ivan Franko National University of Lviv, Lviv, Ukraine
  • D.M. Maksymchuk Ivan Franko National University of Lviv, Lviv, Ukraine
  • I.I. Medvid Ivan Franko National University of Lviv, Lviv, Ukraine
Keywords: gallium oxide, activator, thin films, photoluminescence, cathodoluminescence


The results of investigation of optical excitation, photoluminescence (PL) and cathodoluminescence (CL) spectra in Cr-doped β-Ga2O3 thin films are presented. The broad bands due to the generation of electron-hole pairs and transitions from the 4А2 ground level to the 4Т1 and 4Т2 excited states in Cr3+ ions are observed in the photoexcitation spectra. The R-lines and phonon repetitions of R-lines are observed on the luminescence spectra against the background of a broad structureless band with a maximum around 700 nm, caused by the 4T24A2 transitions in Cr3+ ions. The crystal field force Dq was determined and the Stokes and anti-Stokes repetitions of R-lines were interpreted.


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How to Cite
BordunO., BordunB., KukharskyyI., MaksymchukD., & MedvidI. (2023). Luminescence of Cr-doped β-Ga2O3 thin films. Physics and Chemistry of Solid State, 24(3), 490-494.
Scientific articles (Physics)