Investigation of V1-xTixFeSb Semiconductor Solid Solution. II. Peculiarities of Crystal and Electronic Structure

  • V.V. Romaka National University “Lvivska Politechnika”
  • P. Rogl Institut fur Physikalische Chemie, Universitet Wien
  • L.P. Romaka Ivan Franko National University of Lviv
  • Yu.V. Stadnyk Ivan Franko National University of Lviv
  • R.O. Korzh National University “Lvivska Politechnika”
  • V.Ya. Krayovskyy National University “Lvivska Politechnika”
  • T.M. Kovbasuk National University “Lvivska Politechnika”
  • H.V. Tsygylyk National University “Lvivska Politechnika”
Keywords: semiconductor, electrical conduction, electronic structure

Abstract

The peculiarities of the crystalandelectronicstructureof V1-xTixFeSb, х = 0 – 0,20, semiconductor solid solution wereinvestigated. Themechanismofgenerationofstructuraldefectsofacceptoranddonornatureisdescribed. In particular the nature of donors in n-VFeSb was established (“a priori doping”) as a result of presence of vacancies in Sb atomic site (4b). The obtained result lays in the basis of the technology for obtaining thermoelectric materials based on n-VFeSb with maximal efficiency of thermal to electrical energy conversion.

References

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Published
2015-06-15
How to Cite
Romaka, V., Rogl, P., Romaka, L., Stadnyk, Y., Korzh, R., Krayovskyy, V., Kovbasuk, T., & Tsygylyk, H. (2015). Investigation of V1-xTixFeSb Semiconductor Solid Solution. II. Peculiarities of Crystal and Electronic Structure. Physics and Chemistry of Solid State, 16(2), 335-340. https://doi.org/10.15330/pcss.16.2.335-340
Section
Scientific articles

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