Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer

  • S.P. Novosyadliy Vasyl Stefanyk Precarpathian National University
  • V.M. Gryga Vasyl Stefanyk Precarpathian National University
  • A.V. Pavlyshyn Vasyl Stefanyk Precarpathian National University
  • V.M. Lukovkin Vasyl Stefanyk Precarpathian National University
Keywords: electronics, LSI, Schottky FET, electroscopy, GaAs

Abstract

In this paper described researched essentials and physical mechanisms which determine photosensitivity of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer under their illumination in impure zone absorption spectrum. Conducted experiments showed that source current changing with the type of deep centers, change of value is determined by two factors: change width of volumetric charge barrier contact layer and width of dipole layer on border section of active heterojunction layer of Si-wafer.

References

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Published
2019-12-15
How to Cite
NovosyadliyS., GrygaV., PavlyshynA., & LukovkinV. (2019). Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer. Physics and Chemistry of Solid State, 20(4), 453-456. https://doi.org/10.15330/pcss.20.4.453-456
Section
Scientific articles