Investigation of Electronic Structure of Zr1-xVxNiSn Semiconductive Solid Solution
The peculiarities of electronic and crystal structures of Zr1-xVxNiSn (x = 0 - 0.10) semiconductive solid solution were investigated. To predict Fermi level εF behavior, band gap εg and electrokinetic characteristics of Zr1-xVxNiSn, the distribution of density of electronic states (DOS) was calculated. The mechanism of simultaneous generation of structural defects of donor and acceptor nature was determined based on the results of calculations of electronic structure and measurement of electrical properties of Zr1-xVxNiSn semiconductive solid solution. It was established that in the band gap of Zr1-xVxNiSn the energy states of the impurity donor εD2 and acceptor εA1 levels (donor-acceptor pairs) appear, which determine the mechanisms of conduction of semiconductor.
V. Romaka, L. Romaka, Yu. Stadnyk, A. Horyn, V. Krayovskyy, I. Romaniv, P. Garanuyk, Physics and Chemistry of Solid State 20(1), 33 (2019) (doi: 10.15330/pcss.20.1.39).
V.A. Romaka, V.V. Romaka, and Yu. V. Stadnyk, Intermetallic Semiconductors: Properties and Applications (L’vivska Politekhnika, Lviv, 2011). [in Ukrainian].
M. Schruter, H. Ebert, H. Akai, P. Entel, E. Hoffmann, G.G. Reddy, Phys. Rev. B 52, 188 (1995) (DOI:https://doi.org/10.1103/PhysRevB.52.188).
V.L. Moruzzi, J.F. Janak, A.R. Williams, Calculated electronic properties of metals (Pergamon Press, NY, 1978).
V.V. Romaka, P. Rogl, L. Romaka, Yu. Stadnyk, A. Grytsiv, O. Lakh, V. Krayovskii, Intermetallics 35, 45 (2013) (https://doi.org/10.1016/j.intermet.2012.11.022).
N.F. Mott, E.A. Davis, Electron processes in non-crystalline materials (Clarendon Press, Oxford, 1979).