Investigation of Electronic Structure of Zr1-xVxNiSn Semiconductive Solid Solution

Yu.V. Stadnyk; V.V. Romaka; V.A. Romaka; A.M. Нoryn; L.P. Romaka; V.Ya. Krayovskyy; І.М. Romaniv

doi:10.15330/pcss.20.2.127-132

Authors

Yu.V. Stadnyk Ivan Franko National University of Lviv
V.V. Romaka Institute for Solid State Research
V.A. Romaka National University "Lviv Polytechnic"
A.M. Нoryn Ivan Franko National University of Lviv
L.P. Romaka Ivan Franko National University of Lviv
V.Ya. Krayovskyy National University “Lvivska Politechnika”
І.М. Romaniv Ivan Franko National University of Lviv

DOI:

https://doi.org/10.15330/pcss.20.2.127-132

Keywords:

resistivity, thermopower coefficient, Fermi level

Abstract

The peculiarities of electronic and crystal structures of Zr_1-xV_xNiSn (x = 0 - 0.10) semiconductive solid solution were investigated. To predict Fermi level ε_F behavior, band gap ε_g and electrokinetic characteristics of Zr_1-xV_xNiSn, the distribution of density of electronic states (DOS) was calculated. The mechanism of simultaneous generation of structural defects of donor and acceptor nature was determined based on the results of calculations of electronic structure and measurement of electrical properties of Zr_1-xV_xNiSn semiconductive solid solution. It was established that in the band gap of Zr_1-xV_xNiSn the energy states of the impurity donor ε_D² and acceptor ε_A¹ levels (donor-acceptor pairs) appear, which determine the mechanisms of conduction of semiconductor.

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