Hole Conductivity of Thin Layers of Cadmium Telluride with Li and Ca Impurities

V.P. Makhniy; T.M. Mazur; M.M. Berezovsky; O.V. Kinzerska; V.V. Prokopiv

doi:10.15330/pcss.19.4.313-315

Authors

V.P. Makhniy Yuriy Fedkovych Chernivtsi National University
T.M. Mazur Vasyl Stefanyk Precarpathian National University
M.M. Berezovsky Yuriy Fedkovych Chernivtsi National University
O.V. Kinzerska Yuriy Fedkovych Chernivtsi National University
V.V. Prokopiv Vasyl Stefanyk Precarpathian National University

DOI:

https://doi.org/10.15330/pcss.19.4.313-315

Keywords:

cadmium telluride, conductivity, isovalent impurity, point defects, ionization energy

Abstract

By low-temperature annealing of n-CdTe substrates in aqueous suspensions of LiNO₃ and Ca(NO₃)₂ salts pconductivity layers are created. The estimated concentration of free holes in diffusion layers at 300K is (5-50)∙10¹⁵ см^-3

References

Properties of narrowgap cadmium based compounds (INSPEC, The institution of Electrical Engineers, London, United Kingdom, 1994).

D. V. Korbutyak, S. V. Melnychuk, E. V. Korbut, M. M. Borysyuk, Cadmium telluride: impurity-defect states and detector properties (Ivan Fedorov, Kiev, 2000).

K. Chopra, S. Das, Thin-film solar cells (MIR, Moscow, 1986).

V. P. Makhniy, I. I. German, G. I. Bodyul, Method for obtaining Hd-conductive CdTe layers. Patent of Ukraine for Utility Model UA №107086, Byul. №10, 25.05.2015.

I. V. Shalimova, Semiconductor Physics (Energoatom, Moscow, 1985).

V. P. Makhniy, Physics and Chemistry of Point Defects in Semiconductors (Chernivtsi National University, Chernivtsi, 2014).