Influence of dislocation structure on electrical and spectroscopic properties of MoOx/p-CdTe/MoOx heterostructures

I.M. Fodchuk; A.R. Kuzmin; O.L. Maslyanchuk; I.I. Hutsuliak; M.S. Solodkyi; Yu.T. Roman; M.M. Solovan; O.Yo. Gudymenko

doi:10.15330/pcss.23.1.144-149

Authors

I.M. Fodchuk Yuri Fedjkovych Chernivtsy National University
A.R. Kuzmin Yuri Fedjkovych Chernivtsy National University
O.L. Maslyanchuk Yuri Fedjkovych Chernivtsy National University
I.I. Hutsuliak Yuri Fedjkovych Chernivtsy National University
M.S. Solodkyi Yuri Fedjkovych Chernivtsy National University
Yu.T. Roman Yuri Fedjkovych Chernivtsy National University
M.M. Solovan Yuri Fedjkovych Chernivtsy National University
O.Yo. Gudymenko V.E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine

DOI:

https://doi.org/10.15330/pcss.23.1.144-149

Keywords:

cadmium telluride, defect structure, X-ray multiaxial diffractometry, heterostructures, X- and γ-radiation detectors

Abstract

The defective structure of p-CdTe:Cl single crystals and MoOx/p-CdTe/MoOx heterostructures were investigated by high-resolution X-wave diffractometry methods. Different models of dislocation systems were used and the dislocation densities were estimated from the Williamson-Hall plot. It is noted that significant deformations of the mismatch in the transition layer negatively affect the current–voltage characteristics of heterostructures.

References

J.F. Butler, F.E Doty, C. Lingren and B. Apotovsky, Presented at the 2nd Topical Meeting on Industrial Radiation and Radioisotope Measurement Applications (Raleigh, September 8-11, 1992); https://doi.org/10.1016/0168-9002(96)00219-7.

S. Abbaspour, B. Mahmoudian, and J.P. Islamian, World J Nucl Med. 16(2), 101 (2017); https://doi.org/10.4103/1450-1147.203079.

A. Cola and I. Farella, Applied physics letters 105, 203501 (2014); https://doi.org/10.1063/1.4902188.

O. Maslyanchuk, V. Kulchynsky, M. Solovan, V. Gnatyuk, C. Potiriadis, I. Kaissas, V. Brus, Phys. Stat. Sol. C 14(3–4), 1600232 (2017); http://dx.doi.org/10.1002/pssc.201600232.

O. Maslyanchuk, M. Solovan, V. Brus, P. Maryanchuk, E. Maistruk, I. Fodchuk, V. Gnatyuk, T. Aoki, C. Lambropoulos, K. Potiriadis, IEEE Trans. Nucl. Sci. 65(7), 1365 (2018); http://dx.doi.org/10.1109/TNS.2018.2838766.

L.A. Kosyachenko, O.L. Maslyanchuk, V.M. Sklyarchuk, Semiconductors 39(6), 722 (2005); https://doi.org/10.1134/1.1944866.

O.L. Maslyanchuk, M.M. Solovan, V.V. Brus, V.V. Kulchynsky, P.D. Maryanchuk, I.M. Fodchuk, V.A. Gnatyuk, T. Aoki, C. Potiriadis, Y. Kaissas, IEEE Trans. Nucl. Sci. 64(5), 1168 (2017); http://dx.doi.org/10.1109/TNS.2017.2694701.

O.L. Maslyanchuk, M.M. Solovan, E.V. Maistruk, V.V. Brus, P.D. Maryanchuk, V.A. Gnatyuk, T. Aoki, Proc. SPIE, 10612 (2018); https://doi.org/10.1117/12.2305085.

J. Luschitz, B. Siepchen, J. Schaffner, K. Lakus-Wollny, G. Haindl, A. Klein, W. Jaegermann, Thin Solid Films 517(7), 2125 (2009); https://doi.org/10.1016/j.tsf.2008.10.075.

M.D. Borcha, M.S. Solodkyi, S.V. Balovsyak, V.M. Tkach, I.I. Hutsuliak, A.R. Kuzmin, О.О. Tkach, V.P. Kladko, O.Y. Gudymenko, О.І. Liubchenko, Z. Świątek, Semiconductor Physics, Quantum Electronics and Optoelectronics 22(4), 381 (2019); https://doi.org/10.15407/spqeo22.04.381.

V.V. Brus, O.L. Maslyanchuk, M. M. Solovan, P.D. Maryanchuk, I.M. Fodchuk, V.A. Gnatyuk, N.D. Vakhnyak, S.V. Melnychuk, T. Aoki, Scientific Reports 9, 1065 (2019); https://doi.org/10.1038/s41598-018-37637-w.

M.A. Lampert, P. Mark, Current Injection in Solids, Academic Press (New York, 1970).

A. Zoul, E. Klier, Czechoslovak J. Phys. B 27(7), 789 (1977); https://doi.org/10.1007/BF01589320.

I. Fodchuk, A. Kuzmin, I. Hutsuliak, M. Solodkyi, V. Dovganyuk, O. Maslyanchuk, Yu. Roman, R. Zaplitnyy, O. Gudymenko, V. Kladko, V. Mоlоdkin, V. Lizunov, Proc. SPIE 113691H (2020); https://doi.org/10.1117/12.2553970.

X. Chut, B.K. Tanner, Semicond. Sci. Tech. 2, 765 (1987); https://doi.org/10.1088/0268-1242/2/12/002.

P.B. Hirt, Mosaic structure (Metallurgy, Moscow, 1960).

E. Schafler, M. Zehetbauer, and T. Ungar, Materials Science and Engineering. 319-321, 220 (2001); https://doi.org/10.1016/S0921-5093(01)00979-0.

E. Metzger, R. Hopler, and E. Born, Philosophical Magazine. 77(4), 1013 (1998); https://doi.org/10.1080/01418619808221225.

I.M. Fodchuk, V.V. Dovganiuk, I.I. Gutsuliak, I.P. Yaremiy, A.Y. Bonchyk, G.V. Savytsky, I.M. Syvorotka, O.G. Skakunova, Metallofizika i Noveishie Tekhnologii 35(9), 1209 (2013).

M.D. Borcha, M.S. Solodkyi, S.V. Balovsyak, V.M. Tkach, I.I. Hutsuliak, A.R. Kuzmin, О.О. Tkach, V.P. Kladko, O.Y. Gudymenko, О.І. Liubchenko, Z. Świątek, Semiconductor Physics, Quantum Electronics and Optoelectronics 22(4), 381 (2019); https://doi.org/10.15407/spqeo22.04.381.