Fabrication and Tailoring the Structural and Dielectric Characteristics of GO/Sb2O3/PMMA/PC Quaternary Nanostructures For Solid State Electronics Nanodevices
In this paper, films of (PMMA-PC/Sb2O3-GO) quaternary nanostructures were prepared by casting method with different concentrations of Sb2O3/GO NPs are (0, 1.4 %, 2.8 %, 4.2 %,and 5.6 %). The structural and dielectric characteristics of nanostructures system (PMMA-PC/Sb2O3-GO) have been explored to use in different solid state electronics nanodevices applications. The morphology of (PMMA-PC/Sb2O3-GO) nanostructures films was studied using a scanning electron microscope (SEM). SEM images indicate a large number of uniform and coherent aggregates or chunks. The Fourier transform infrared spectroscopy(FTIR) analysis were studied to show the interactions between the Sb2O3/GO NPs and PMMA/PC blend. The dielectric properties of nanostructures films were investigated in the frequency range (100HZ-5MHZ). The dielectric constant, dielectric loss, and A.C electrical conductivity increase with the concentration of (Sb2O3-GO) NPs. The dielectric constant and dielectric loss were reduced, whereas electrical conductivity increased with frequency. Finally, results showed the PMMA-PC/Sb2O3-GO nanostructures may be considered as promising materials for solid state electronics nanodevices.
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