Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSn


  • Yu. Stadnyk Ivan Franko National University of Lviv, Lviv, Ukraine
  • V.A. Romaka Lviv Polytechnic National University, Lviv, Ukraine
  • L. Romaka Ivan Franko National University of Lviv, Lviv, Ukraine
  • A. Horyn Ivan Franko National University of Lviv, Lviv, Ukraine
  • V. Pashkevych Lviv Polytechnic National University, Lviv, Ukraine




Semiconductor, Electric conductivity, thermopower coefficient, Fermi level


The structural, electrokinetic, and energetic properties of the Ti1-xAlxNiSn semiconductor solid solution, obtained by introducing of Al atoms into the structure of the TiNiSn half-Heusler phase by substituting Ti atoms in the crystallographic position 4a, were studied. It is shown that in the range of concentrations = 0–0.01, Al atoms mainly replace Ni atoms in the 4c position, generating acceptor states. It was established that at temperatures = 80–160 K, the ratio of concentrations of ionized acceptor and donor states in n-Ti1-xAlxNiSn, х = 0–0.04, is unchanged, but the concentration of donors is greater. At higher temperatures, ≥ 250 K, deep donor states that existed in n-TiNiSn as a result of "a priori doping" of the semiconductor are ionized. An additional mechanism for the generation of donor states in n-Ti1-xAlxNiSn when the tetrahedral voids of the structure are partially occupied by Al atoms was revealed. The concentration ratio of the generated donor-acceptor states determines the position of the Fermi level εF and the conductivity mechanisms of n-Ti1-xAlxNiSn. The studied semiconductor solid solution is a promising thermoelectric material.


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How to Cite

Stadnyk, Y., Romaka, V., Romaka, L., Horyn, A., & Pashkevych, V. (2024). Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSn. Physics and Chemistry of Solid State, 25(1), 157–163. https://doi.org/10.15330/pcss.25.1.157-163



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