Photoelectric properties of heterojunctions based on semiconducting metal oxides and indium selenide

Editorial Board PCSS Journal; I.G. Tkachuk; I.G. Orletskii; Z.D. Kovalyuk; V.I. Ivanov; A.V. Zaslonkin; B.V. Kusnir

doi:10.15330/pcss.26.2.231-234

Authors

I.G. Tkachuk Сhernivtsi Branch of Frantsevych Institute of Problems of Materials National Academy of Sciences of Ukraine; Bukovinian State Medical University, Chernivtsi, Ukraine
I.G. Orletskii Yuriy Fedkovych Chernivtsi National University, Chernivtsi, Ukraine
Z.D. Kovalyuk Сhernivtsi Branch of Frantsevych Institute of Problems of Materials National Academy of Sciences of Ukraine
V.I. Ivanov Сhernivtsi Branch of Frantsevych Institute of Problems of Materials National Academy of Sciences of Ukraine
A.V. Zaslonkin Сhernivtsi Branch of Frantsevych Institute of Problems of Materials National Academy of Sciences of Ukraine
B.V. Kusnir Сhernivtsi Branch of Frantsevych Institute of Problems of Materials National Academy of Sciences of Ukraine

DOI:

https://doi.org/10.15330/pcss.26.2.231-234

Keywords:

indium selenide, heterostructure, photoresponse

Abstract

The results of a comparison of the photosensitivity of heterojunctions based on InSe layered semiconductor and various wide band gap oxides (Mn₂O₃, CuFeO₂, Fe₂O₃) produced by the spray pyrolysis method are given. The photoresponse of the heterojunction irradiated from the side of metal oxides was studied in the photon energy range of 1.2÷3 eV. The possibility of the formation of In₂Se₃ phase between of InSe and oxides and its effect on the photosensitivity of the heterostructures have been considered.

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