Electrical Properties of Cd Doped InSe Crystals

  • V.M. Kaminskii I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, Chernivtsi Department
  • Z.D. Kovalyuk I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, Chernivtsi Department
  • V.I. Ivanov I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, Chernivtsi Department
  • I.G. Tkachyuk I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, Chernivtsi Department
  • V.V. Netyaga I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, Chernivtsi Department
Keywords: layered crystal, indium selenide, conductivity

Abstract

The measurements of electrical conductivity along (alternating electric field) and across (direct electric field)the crystallographic C axis of Cd‐doped indium selenide single crystals are carried out. The parameters of thehopping conductivity of InSe <Cd> are calculated.

References

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Published
2019-05-03
How to Cite
KaminskiiV., KovalyukZ., IvanovV., TkachyukI., & NetyagaV. (2019). Electrical Properties of Cd Doped InSe Crystals. Physics and Chemistry of Solid State, 19(2), 159-162. https://doi.org/10.15330/pcss.19.2.159-162
Section
Review