Investigation of structural, electrokinetic and energy state properties of the semiconductive Zr1-xVxNiSn solid solution

V. Romaka; L. Romaka; Y. Stadnyk; A. Horyn; V. Krayovskyy; I. Romaniv; P. Garanuyk

doi:10.15330/pcss.20.1.39

Authors

V. Romaka Ya. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics National Academy of Sciences of Ukraine; National University “Lvivska Politechnika”
L. Romaka Ivan Franko National University of Lviv
Y. Stadnyk Ivan Franko National University of Lviv
A. Horyn Ivan Franko National University of Lviv
V. Krayovskyy National University "Lviv Polytechnic"
I. Romaniv Ivan Franko National University of Lviv
P. Garanuyk National University "Lviv Polytechnic"

DOI:

https://doi.org/10.15330/pcss.20.1.39

Keywords:

solid solution, electrical conductivity, thermopower coefficient, Fermi level

Abstract

Structural, electrokinetic and energy state characteristics of the Zr_1-_xV_xNiSn semiconductive solid solution (х=0–0.10) were investigated in the temperature interval 80–400 К. It was shown that doping of the ZrNiSn compound by V atoms (r_V=0.134 nm) due to substitution of Zr (r_Zr=0.160 nm) results in increase of lattice parameter а(х) of Zr_1-_xV_xNiSn indicating unforecast structural change. Based on analysis of the motion rate of the Fermi level Δε_F/Δх for Zr_1-_xV_xNiSn in direction of the conduction band it was concluded about simultaneous generation of the structural defects of the donor and acceptor nature (donor-acceptor pairs) by unknown mechanism and creation of the corresponding energy levels in the band gap of the semiconductor.

References

[1] V. A. Romaka, V. V. Romaka, and Yu. V. Stadnyk, Intermetallic Semiconductors: Properties and Applications (Lviv, Lvivska Politekhnika, 2011) [in Ukrainian].

[2] L. I. Anatychuk, Termoelements and Thermoelectric Devices (Kiev, Nauk. Dumka, 1979) [in Ukrainian].

[3] V. V. Romaka, P. Rogl, L. Romaka, Yu. Stadnyk, A. Grytsiv, O. Lakh, V. Krayovskyy, Intermetallics 35, 45 (2013) (doi.org/10.1016/j.intermet.2012.11.022).

[4] V. V. Romaka, L. P. Romaka, V. Ya. Krayovskyy, Yu. V. Stadnyk, Stannides of rare earths and transition metals (Lviv polytechnic university, Львів, 2015).

[5] L. P. Romaka, Yu. V. Stadnyk, V. A. Romaka, A. M. Goryn, V. Ya. Krayovskyy, Physics and Chemistry of Solid State, 19(1), 21 (2018) (doi: 10.15330/pcss.19.1.21-28).

[6] L. P. Romaka, Yu. V. Stadnyk, V. V. Romaka, P. Rogl, V. A. Romaka, A. M. Horyn, Physics and Chemistry of Solid State, 19(2), 151 (2018) (doi: 10.15330/pcss.19.2.151-158).

[7] V. A. Romaka, P. Rogl, L. P. Romaka, Yu. V. Stadnyk, V. Ya. Krayovskyy, D. Kacharovskii, A. M. Goryn, Journal of Thermoelectricity, 3, 24 (2016).

[8] L. P. Romaka, Yu. V. Stadnyk, V. A. Romaka, A. M. Goryn, P. Rogl, V. Ya. Krayovskyy, Z. M. Rykavets, Physics and Chemistry of Solid State, 18(1), 41 (2017) (doi: 10.15330/pcss.18.1.41-48).

[9] B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, NY, 1984).

[10] T. Roisnel, J. Rodriguez-Carvajal, Mater. Sci. Forum, Proc. EPDIC7, 378-381, 118 (2001).

[11] N. F. Mott, E. A. Davis, Electron processes in non-crystalline materials (Clarendon Press, Oxford, 1979).