Schottky barriers based on graphite and InSe

Editorial Board PCSS Journal; V.M. Kaminskii; V.B. Boledzyuk; I.G. Tkachuk; V.M. Vodopyanov; V.V. Netyaga; M.V. Zapolovskyi

doi:10.15330/pcss.27.3.493-496

Authors

V.M. Kaminskii Сhernivtsi Branch of Frantsevych Institute of Problems of Materials National Academy of Sciences of Ukraine, Chernivtsi, Ukraine
V.B. Boledzyuk Сhernivtsi Branch of Frantsevych Institute of Problems of Materials National Academy of Sciences of Ukraine, Chernivtsi, Ukraine
I.G. Tkachuk Сhernivtsi Branch of Frantsevych Institute of Problems of Materials National Academy of Sciences of Ukraine, Chernivtsi, Ukraine; Bukovinian State Medical University, Chernivtsi, Ukraine
V.M. Vodopyanov Сhernivtsi Branch of Frantsevych Institute of Problems of Materials National Academy of Sciences of Ukraine, Chernivtsi, Ukraine
V.V. Netyaga Сhernivtsi Branch of Frantsevych Institute of Problems of Materials National Academy of Sciences of Ukraine, Chernivtsi, Ukraine
M.V. Zapolovskyi Yuriy Fedkovych Chernivtsi National University, Chernivtsi, Ukraine

DOI:

https://doi.org/10.15330/pcss.27.3.493-496

Keywords:

indium selenide, graphite, Schottky barrier, I-V characteristics, photosensitivity

Abstract

Schottky barriers based on the layered semiconductor InSe and graphite were fabricated by vacuum sputtering. Their I-V characteristics at different temperatures were studied. The electrical parameters of the structure were determined, and the current flow mechanisms were analyzed. The photosensitivity spectra of the barrier irradiated from the graphite side in the incident light energy range of 1.2÷3 eB were obtained.

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