Electrical Instability of CdTe:Si Crystals

Ye.S. Nykoniuk; O.E. Panchuk; S.V. Solodin; Z.I. Zakharuk; P.M. Fochuk; M.O. Kovalets

doi:10.15330/pcss.18.1.29-33

Authors

Ye.S. Nykoniuk National University of Water Management and Nature Resources Use
O.E. Panchuk Yuriy Fedkovych Chernivtsi National University
S.V. Solodin Yuriy Fedkovych Chernivtsi National University
Z.I. Zakharuk Yuriy Fedkovych Chernivtsi National University
P.M. Fochuk Yuriy Fedkovych Chernivtsi National University
M.O. Kovalets National University of Water Management and Nature Resources Use

DOI:

https://doi.org/10.15330/pcss.18.1.29-33

Keywords:

cadmium telluride

Abstract

Results of Hall effect measurements of cadmium telluride crystals, doped by silicon (dopant concentration in the melt was 10¹⁸ - 10¹⁹ cm^-3), allowed to classify the studied samples and the conditions under which probably the definite crystal and impurity states are realized. We have found the distinction between 3 type of CdTe:Si crystals: (1) low-resistance p-type crystals with shallow acceptors, in which Si impurity is localized mainly in the large inclusions; (2) semi-insulating crystal with deep acceptors and submicron size dopant precipitates that are source/drain for interstitials Si_i- shallow donors; and (3) low-resistance crystals in which the n-type conductivity is provided by shallow donors: Si_i (and/or Si_Cd). Therefore the silicon is responsible for n-type conductivity of doped samples, introducing as a donor Si_і and provides semi-insulating state by forming deep acceptor complexes (Si_Cd^-V_Cd^2-)^-with (Е_v + 0.65 eV). Besides, the submicron silica precipitates, that have a tendto"dissolution" at relatively low temperatures, can act aselectricallyactive centers.

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