Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications

S.P. Novosiadly; T.H. Benko; I.T. Kogut

doi:10.15330/pcss.20.3.311-317

Authors

S.P. Novosiadly Vasyl Stefanyk Precarpathian National University
T.H. Benko Vasyl Stefanyk Precarpathian National University
I.T. Kogut Vasyl Stefanyk Precarpathian National University

DOI:

https://doi.org/10.15330/pcss.20.3.311-317

Keywords:

gallium arsenide, FET, thermal resistance, electrophysical diagnosis

Abstract

In this paper, the structure of GaAs FET on a silicon substrate, suitable for local integration in the local SOI technology and the method of its electrophysical diagnostics based on changes in the thermal resistance (RT), is analyzed. It is known that the thermal conductivity of GaAs is 3-4 times worse than silicon. To eliminate this disadvantage, the technology of forming high-speed GaAs-structures on the surface of the silicon substrate was propoused.

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