Features of Structural, Electrokinetic, and Energy State Characteristics of ZrNiSn1-xGax Solid Solution

  • L.P. Romaka Ivan Franko National University of Lviv
  • A.M. Нoryn Ivan Franko National University of Lviv
  • Yu.V. Stadnyk Ivan Franko National University of Lviv
  • V.Ya. Krayovskyy Ya. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics National Academy of Sciences of Ukraine
  • V.A. Romaka Ya. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics National Academy of Sciences of Ukraine
  • Z.M. Rykavets National University “Lvivska Politechnika”
  • P.-F. Rogl Universitӓt Wien
Keywords: crystal and electronic structures, conductivity, thermopower coefficient

Abstract

Features of structural, electrokinetic, and energy state characteristics of ZrNiSn1-xGax semiconductive solid solution were investigated in the temperature ranges Т = 80 - 400 K and х = 0 - 0.15. Disorder of crystal structure for n-ZrNiSn compound as a result of occupation of Zr (4d25s2) atoms in 4a sites by Ni (3d84s2) ones up to ~ 1 % was confirmed. It generated donor levels band ɛD1 in the band gap. It was shown that introduction of Ga (4s24p1) atoms by means of substitution of Sn (5s25p2) ones ordered crystal structure. In this case acceptor defects were generated in 4b sites and it created extended acceptor impurity band ɛА. It was suggested that with generation of acceptor structural defects the vacancies in the Sn (4b) atomic sites simultaneously generated donor defects and formed deep donor band ɛD2 (donor-acceptor pair took place).

References

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Published
2017-03-15
How to Cite
Romaka, L., НorynA., Stadnyk, Y., Krayovskyy, V., Romaka, V., Rykavets, Z., & Rogl, P.-F. (2017). Features of Structural, Electrokinetic, and Energy State Characteristics of ZrNiSn1-xGax Solid Solution. Physics and Chemistry of Solid State, 18(1), 41-48. https://doi.org/10.15330/pcss.18.1.41-48
Section
Scientific articles

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