Investigation of Band Structure of ZrNiSn1-xGax Semiconductor Solid Solution

  • L.P. Romaka
  • Yu.V. Stadnyk Ivan Franko National University of Lviv
  • V.V. Romaka National University “Lvivska Politechnika”
  • V.Ya. Krayovsky National University “Lvivska Politechnika”
  • P.-F. Rogl Інститут фізичної хімії Віденського університету
  • A.M. Нoryn Ivan Franko National University of Lviv
Keywords: crystal and electronic structures, conductivity, thermopower coefficient


The mechanism of simultaneous generation of donor-acceptor pairs in ZrNiSn1-xGax semiconductor solid solution is established. The modeled distribution of atoms in the crystal lattice of ZrNiSn1-xGax showed that the speed of movement of Fermi level εF, obtained from the band structure calculations is in agreement with experimental extracted from lnρ(1/T) dependencies. It is shown that with substitution of Sn (5s25p2) with Ga (4s24p1) atoms in 4b crystallographic site both acceptor and donor (vacancies in 4b site) defects are generated.


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How to Cite
Romaka, L., Stadnyk, Y., Romaka, V., Krayovsky, V., Rogl, P.-F., & НorynA. (2017). Investigation of Band Structure of ZrNiSn1-xGax Semiconductor Solid Solution. Physics and Chemistry of Solid State, 18(2), 187-193.
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