Investigation of structural, energy state and kinetic characteristics of RNiSb semiconductor (R = Gd, Lu)


  • L.P. Romaka Ivan FrankoNationalUniversityofLviv
  • D. Kaczorowski Institute of Low Temperature and Structure Research Polish Academy of Sciences
  • A.M. Нoryn Ivan Franko National University of Lviv
  • Yu.V. Stadnyk Ivan Franko National University of Lviv
  • V.Ya. Krayovskyy National University “Lvivska Politechnika”
  • V.V. Romaka National University “Lvivska Politechnika”



crystal structure, electronic structure, electrical conductivity, thermopower


Peculiarities of structural, energy and kinetic characteristics of p-GdNiSb and p-LuNiSb semiconductors in the temperature range T = 4.2 - 400 K. were investigated. ) to 6% vacancy and partial, to 1.35%, displacement of Ni (4c) atoms by Lu (5d16s2).


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How to Cite

Romaka, L., Kaczorowski, D., Нoryn A., Stadnyk, Y., Krayovskyy, V., & Romaka, V. (2016). Investigation of structural, energy state and kinetic characteristics of RNiSb semiconductor (R = Gd, Lu). Physics and Chemistry of Solid State, 17(1), 37–42.



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