Features of Structural, Electrokinetic, and Energy State Characteristics of ZrNiSn1-xGax Solid Solution

L.P. Romaka; A.M. Нoryn; Yu.V. Stadnyk; V.Ya. Krayovskyy; V.A. Romaka; Z.M. Rykavets; P.-F. Rogl

doi:10.15330/pcss.18.1.41-48

Authors

L.P. Romaka Ivan Franko National University of Lviv
A.M. Нoryn Ivan Franko National University of Lviv
Yu.V. Stadnyk Ivan Franko National University of Lviv
V.Ya. Krayovskyy Ya. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics National Academy of Sciences of Ukraine
V.A. Romaka Ya. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics National Academy of Sciences of Ukraine
Z.M. Rykavets National University “Lvivska Politechnika”
P.-F. Rogl Universitӓt Wien

DOI:

https://doi.org/10.15330/pcss.18.1.41-48

Keywords:

crystal and electronic structures, conductivity, thermopower coefficient

Abstract

Features of structural, electrokinetic, and energy state characteristics of ZrNiSn_1-xGa_x semiconductive solid solution were investigated in the temperature ranges Т = 80 - 400 K and х = 0 - 0.15. Disorder of crystal structure for n-ZrNiSn compound as a result of occupation of Zr (4d²5s²) atoms in 4a sites by Ni (3d⁸4s²) ones up to ~ 1 % was confirmed. It generated donor levels band ɛ_D1 in the band gap. It was shown that introduction of Ga (4s²4p¹) atoms by means of substitution of Sn (5s²5p²) ones ordered crystal structure. In this case acceptor defects were generated in 4b sites and it created extended acceptor impurity band ɛ_А. It was suggested that with generation of acceptor structural defects the vacancies in the Sn (4b) atomic sites simultaneously generated donor defects and formed deep donor band ɛ_D2 (donor-acceptor pair took place).

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