Electrical Properties of Cd Doped InSe Crystals

V.M. Kaminskii; Z.D. Kovalyuk; V.I. Ivanov; I.G. Tkachyuk; V.V. Netyaga

doi:10.15330/pcss.19.2.159-162

Authors

V.M. Kaminskii I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, Chernivtsi Department
Z.D. Kovalyuk I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, Chernivtsi Department
V.I. Ivanov I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, Chernivtsi Department
I.G. Tkachyuk I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, Chernivtsi Department
V.V. Netyaga I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, Chernivtsi Department

DOI:

https://doi.org/10.15330/pcss.19.2.159-162

Keywords:

layered crystal, indium selenide, conductivity

Abstract

The measurements of electrical conductivity along (alternating electric field) and across (direct electric field)the crystallographic C axis of Cd‐doped indium selenide single crystals are carried out. The parameters of thehopping conductivity of InSe <Cd> are calculated.

References

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