Optical properties of CdTe doped Ca
DOI:
https://doi.org/10.15330/pcss.21.1.52-56Keywords:
cadmium telluride, isovalent impurity, optical absorption and reflection, intense photoluminescenceAbstract
The optical absorption, reflection and luminescence of CdTe:Ca were studied. It was established that the obtained Ca doped surface layers are characterized by intense photoluminescence from η = 8-10% in the edge region. Radiation is formed due to interband recombination of free charge carriers and the annihilation of excitons bound on isovalent impurities of Ca. The indicated components are observed in the differential optical reflection spectra Ŕω in the surface layer obtained by doping CdTe substrates with an isovalent Ca impurity. It is established that doping causes the formation of p-type conductivity.
References
O. Ermakov, Applied optoelectronics (Technosphere, Moskva, 2004).
V.P. Makhniy, M.M. Slyotov, N.V. Skrypnyk, Ukrainian Journal of Physical Optics 10(1), 54 (2009) (https://doi.org/10.3116/16091833/10/1/54/2009).
D.V. Korbutyak, S.V. Melnichuk, E.V. Korbut, M.M. Borisyuk, Telluride cadmium: home-defective camps and detection authorities ("Ivan Fedorov", Kyiv, 2000).
T. Mazur, V. Prokopiv, L. Turovska, Molecular Crystals and Liquid Crystals 671(1), 85 (2018) (https://doi.org/10.1080/15421406.2018.1542088).
T.M. Mazur, V.P. Makhniy, V.V. Prokopiv, M.M. Slyotov, Journal of Nano- and Electronic Physics, 9(5), 05047 (2017) (https://doi.org/10.21272/jnep.9(5).05047).
V.I. Fistul, Atoms of dopants in semiconductors (state and behavior) (Fizmatlit, Moskva, 2004).
V.P. Makhniy, M.M. Sletov, N.V. Demich., A.M. Sletov, Transactions of Int. scientific conf. "Actual problems of solid state physics." (Ed. Center BSU, Minsk, 2005), 385.
V.P. Makhniy, T.M. Mazur, M.M. Berezovsky, O.V. Kinzerska, V.V. Prokopiv, Physics and Chemistry of Solid State, 19(4), 313 (2018) (https://doi.org/10.15330/pcss.20.4.372-375).
Yu.V. Vorobiev, V.I. Dobrovolsky, V.I. Stryha, Semiconductor research methods (Vyshcha schola, Kyiv, 1988).
M.M. Slyotov, А.M. Slyotov, Journal IAPGOS, 4, 4 (2018).
V.V. Prokopiv, B.S. Dzundza, O.B. Kostyuk, T.M. Mazur, L.V. Turovska, O.M. Matkivskyi, M.V. Deychakivskyi, Physics and Chemistry of Solid State, 20 (4), 372 (2019) (https://doi.org/10.15330/pcss.20.4.372-375).
V.P. Gribkovsky, The theory of absorption and emission of light in semiconductors (Science and technology, Minsk, 1975).
V.I Gavrilenko, A.M. Grekhov, D.V. Korbutyak, V.G. Litovchenko, Optical properties of semiconductors. Directory (Naukova Dumka, Kyiv, 1987).
V. Khomyak, M. Slyotov, I. Shtepliuk, O. Slyotov, and V. Kosolovskiy, Acta Physica Polonica A, 122 (6), 1039 (2012).
Era Koh, D.W. Langer, J. Luminescence, (1-2), 514 (1970).
M.M. Slyotov, V.P. Makhniy, A.M. Slyotov, V.V. Kosolovskiy, Telecommunication and Radio Engineering, 73 (10), 909 (2014) (https://doi.org/10.1615/TelecomRadEng.v73.i10.50).
I.V. Horichok, H.Ya. Hurhula, V.V. Prokopiv, M.A. Pylyponiuk, Ukrainian Journal of Physics, 61 (11), 992 (2016) (https://doi.org/10.15407/ujpe61.11.0992).
