Hole Conductivity of Thin Layers of Cadmium Telluride with Li and Ca Impurities
By low-temperature annealing of n-CdTe substrates in aqueous suspensions of LiNO3 and Ca(NO3)2 salts pconductivity layers are created. The estimated concentration of free holes in diffusion layers at 300K is (5-50)∙1015 см-3
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