Optical Properties of Monocrystalline Silicon Nanowires


  • P.O. Gentsar V.Ye. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
  • A.V. Stronski V.Ye. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine
  • L.A. Karachevtseva V.Ye. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine
  • V.F. Onyshchenko V.Ye. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine




porous silicon p-Si (100), silicon nanowires, reflection spectra, transmission spectra, absorption spectra, quantum size effect


The paper presents the results of a study of the optical reflection and transmission spectra of a silicon single crystal p-Si (100) with silicon nanowires grown on both sides and porous silicon p-Si (100) on a single crystal substrate in the spectral range 0.2 ÷ 1.7 μm. The layers of nanowires had a thickness of 5.5 µm, 20 µm, 50 µm and a porosity of 60 %. The porous silicon layers had a thickness of 5 μm, 50 μm and a porosity of 45 %, 55 % and 65 %. The change in the energy band structure in single-crystal silicon nanowires and in a single-crystal matrix of porous silicon is shown.


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How to Cite

Gentsar, P., Stronski, A., Karachevtseva, L., & Onyshchenko , V. (2021). Optical Properties of Monocrystalline Silicon Nanowires. Physics and Chemistry of Solid State, 22(3), 453–459. https://doi.org/10.15330/pcss.22.3.453-459



Scientific articles (Physics)