Optical Properties of Monocrystalline Silicon Nanowires
DOI:
https://doi.org/10.15330/pcss.22.3.453-459Keywords:
porous silicon p-Si (100), silicon nanowires, reflection spectra, transmission spectra, absorption spectra, quantum size effectAbstract
The paper presents the results of a study of the optical reflection and transmission spectra of a silicon single crystal p-Si (100) with silicon nanowires grown on both sides and porous silicon p-Si (100) on a single crystal substrate in the spectral range 0.2 ÷ 1.7 μm. The layers of nanowires had a thickness of 5.5 µm, 20 µm, 50 µm and a porosity of 60 %. The porous silicon layers had a thickness of 5 μm, 50 μm and a porosity of 45 %, 55 % and 65 %. The change in the energy band structure in single-crystal silicon nanowires and in a single-crystal matrix of porous silicon is shown.
References
V.V. Tregulov, Porous silicon: technology, properties, application (Ryazan State University named for S. Yesenin, Ryazan, 2011) (in Russian).
[2] Ch. Poole, F. Owens, Nanotechnology (Tekhnosfera, Moskwa, 2009) (in Russian).
N.S. Zayats, P.O. Gentsar, V.G. Boiko, O.S. Litvin, M.V. Vuychik, A.V. Stronski, and I.B. Yanchuk, Semiconductors 43(5), 590 (2009).
P.A. Gentsar, A.I. Vlasenko, Semiconductors 40(9), 1066 (2006).
L. Karachevtseva, M. Kartel, V Kladko, O. Gudymenko, Wang Bo, V. Bratus, O. Lytvynenko, V. Onyshchenko, O. Stronska, Applied Surface Science 434, 142 (2018); https://doi.org/10.1016/j.apsusc.2017.10.029.
V.F. Onyshchenko, L.A. Karachevtseva, Semiconductor Physics, Quantum Electronics & Optoelectronics 23(1), 29 (2020); https://doi.org/10.15407/spqeo23.01.29.
L.A. Karachevtseva, V.F. Onyshchenko, A.V. Sachenko, Ukrainian Journal of Physics 53(9), 874 (2008).
L. Karachevtseva, M. Karas’, V. Onishchenko, F. Sizov, Proceedings of SPIE 5360, 381 (2004); https://doi.org/10.1117/12.530446.
Yu, M. Cardona, Fundamentals of Semiconductors, (Fizmatlit, Moskwa, 2002) (in Russian).
V.I. Gavrilenko, A.M. Grechov, D.V. Korbutyak, V.G. Litovchenko, Optical Properties of Semiconductors (Naukova dumka, Kyiv, 1987) (in Russian).
O.V. Snitko, A.V. Sachenko, V.E. Prymachenko, Problems of Semiconductor Surface Science, (Naukova dumka, Kyiv, 1981) (in Russian).
V.E. Primachenko, O.V. Snitko. Physics of Metal-Doped Semiconductor Surface (Naukova dumka, Kiev, 1988) (in Russian).
F. Bekhsttedt, R. Enderline, Semiconductor Surfaces and Interfaces (Mir, Moskwa, 1990) (in Russian).
Downloads
Published
How to Cite
Issue
Section
