Дисперсія світла та крайове поглинання в тонких плівках Ga1–xAlxN (x=0; 0.03; 0.07)

Editorial Board PCSS Journal; O.M. Bordun; I.Yo. Kukharskyy; I.M. Kofliuk; I.I. Medvid; M.V. Protsak

doi:10.15330/pcss.26.2.203-208

Authors

O.M. Bordun Ivan Franko National University of Lviv, Lviv, Ukraine
I.Yo. Kukharskyy Ivan Franko National University of Lviv, Lviv, Ukraine
I.M. Kofliuk Ivan Franko National University of Lviv, Lviv, Ukraine
I.I. Medvid Ivan Franko National University of Lviv, Lviv, Ukraine
M.V. Protsak Ivan Franko National University of Lviv, Lviv, Ukraine

DOI:

https://doi.org/10.15330/pcss.26.2.203-208

Keywords:

gallium nitride, thin films, refractive index dispersion, fundamental absorption edge

Abstract

The dispersion of the refractive index and the region of the fundamental absorption edge in Ga_1–xAl_xN (x=0; 0.03; 0.07) thin films obtained by high-frequency ion-plasma sputtering have been investigated. It is shown that the dispersion dependence of the obtained films has a complex form. It was found that the value of the optical band gap increases from 3.28 to 3.58 eV with increasing Al concentration from 0 to 7 mol%. Based on the determined direct-band allowed photoelectron transitions in the region of the fundamental absorption edge, the value of the combined effective mass of free charge carriers and their concentration was estimated. It is shown that the shift of the fundamental absorption edge in Ga_1–xAl_xN thin films (x = 0, 0.03, 0.07) is due to the Burstein-Moss effect.

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