Doping of porous activated carbon with Er, a metal with a high electronic states density

I.M. Budzuliak; L.S. Yablon; V.O. Kotsiubynskyi; I.I. Budzuliak; R.V. Ilnytskyi; A.I. Hlubitskyi; N.R. Ilnytskyi

doi:10.15330/pcss.25.4.782-786

Authors

I.M. Budzuliak Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
L.S. Yablon Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
V.O. Kotsiubynskyi Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
I.I. Budzuliak Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
R.V. Ilnytskyi Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
A.I. Hlubitskyi Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
N.R. Ilnytskyi Ivano-Frankivsk National Medical University, Ivano-Frankivsk, Ukraine

DOI:

https://doi.org/10.15330/pcss.25.4.782-786

Keywords:

porous carbon material, erbium, copper, high density of electronic states, specific capacity

Abstract

The effect of doping porous carbon material (PCM) with erbium, as a metal with a high density of electronic states, on the electrochemical properties of PCM was investigated. It was established that the optimal concentration of introduced erbium 0.2% leads to a significant increase in specific capacity for the devices formed on the basis of erbium-doped carbon material. And the doping of PCM with both erbium (0.2 wt.%) and copper (0.1 wt.%) results not only in the specific capacity increase but also lowers total system impedance.

References

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