Modeling of diffusion motion of In nanoparticles in a CdTe crystal during laser-induced doping

S.M. Levytskyi; T. Zhao; Z. Cao; A.V. Stronski

doi:10.15330/pcss.22.2.301-306

Authors

S.M. Levytskyi V.E. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine
T. Zhao Energy Materials and Optoelectronics Unit, Songshan Lake Materials Laboratory
Z. Cao National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”
A.V. Stronski National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”

DOI:

https://doi.org/10.15330/pcss.22.2.301-306

Keywords:

CdTe, laser induced doping, X/γ-ray detectors

Abstract

In order to solve the problem of the ohmic contact between the crystal surface and the metal electrode in the manufacturing process of the X/γ-ray detector, this paper uses a laser to probe the doping process of In/CdTe crystals in different media. In this experiment, the Traveling Heater Method (THM) is used to obtain CdTe(111) crystals that meet the requirements (ρ >10⁹Ω∙cm). In and Au materials are respectively coated on the surface of the crystal sample by the vacuum thermal evaporation method to obtain the crystal sample meeting the requirements. The high-resistance p-type CdTe crystal of a relatively thick In film is irradiated with nanosecond laser pulses, the In film is used as an n-type doping source and as an electrode after laser irradiation.

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