Photonic properties of devices based on multicomponent crystalline compounds with content (Si, Ge, Sn)

S.P. Danylchuk; O.V. Zamurueva; V.E. Sakhnyuk; S.A. Fedosov

doi:10.15330/pcss.22.3.470-476

Authors

S.P. Danylchuk Lesya Ukrainka Volyn National University
O.V. Zamurueva Lesya Ukrainka Volyn National University
V.E. Sakhnyuk Lesya Ukrainka Volyn National University
S.A. Fedosov Lesya Ukrainka Volyn National University

DOI:

https://doi.org/10.15330/pcss.22.3.470-476

Keywords:

crystal, mole fraction, direct and indirect transition, energy gap, absorption coefficient, photosensitivity

Abstract

The paper presents the results of optical and photoelectric measurements and their analysis for Tl_1-xIn_1-xD^IV_xSe₂ (D^IV – Si, Ge, Sn) crystalline compounds in the wavelength range 0.41.4 μm at a temperature T = 300 K. The work aims to investigate the influence of mole fraction D^IVSe₂ on the mechanisms of interband transitions and the basic photon parameters of crystals of ТlInSe₂–D^IVSe₂ solid solutions. It was found that the change in the physical properties of the mole fraction of the components x associated with the rearrangement of the band structure significantly expands the functionality of the Tl_1-xIn_1-x(Si, Ge, Sn)_xSe₂ (x0.25) crystalline compounds as promising materials for optoelectronic devices.

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