Specific Features of Photoconductivity of Tl1-xIn1-xSnxSe2 Monocrystals at Low Temperatures

Array

Authors

  • O.V. Novosad Lesya Ukrainka Eastern European National University
  • G.L. Myronchuk Lesya Ukrainka Eastern European National University
  • S.P. Danylchuk Lesya Ukrainka Eastern European National University
  • O.V. Zamurueva Lesya Ukrainka Eastern European National University
  • L.V. Piskach Lesya Ukrainka Eastern European National University
  • I.V. Kityk Czestochowa University of Technology; Lesya Ukrainka Eastern European National University
  • M.V. Piasecki J. Dlugosz University; Lesya Ukrainka Eastern European National University
  • O.V. Tsisar Lesya Ukrainka Eastern European National University

DOI:

https://doi.org/10.15330/pcss.20.1.55

Keywords:

single crystals, defects, photoconductivity, thermally stimulated conductivity

Abstract

The photoconductivity spectra in the temperature range T≈36-200 K and the spectra of thermostimulated currents in the temperature range T≈70-300 K of Tl1-xIn1-xSnxSe2 single crystals obtained by directional crystallization of Bridgman-Stockbarger have been studied. The induced photoconductivity and long-term photoconductivity relaxation processes have been found. To interpret the found results, a model of two-center recombination has been suggested. It is illustrated that the role of the r-centers of slow recombination are formed by Tl vacancies. On the basis of the studies of the spectra of thermally stimulated currents, the thermal energy of electrons activation with t-levels of adhesion has been determined.

References

[1] S. N. Mustafaeva, M. M. Asadov, A. I. Dzhabbarov, Phys. Solid State 56(6), 1096 (2014).

[2] R. S. Madatov, A. I. Najafov, Yu. M. Mustafayev, M. R. Gazanfarov, I. M. Movsumova, Semiconductors 49(9), 1166 (2015).

[3] R. S. Madatov, A. I. Nadzhafov, T. B. Tagiev, M. R. Gazanfarov, Surface Engineering and Applied Electrochemistry 46(5), 497 (2010).

[4] N. K. Tovstyuk, Sens. elektron. mikrosist. tehnol. 11(2), 53 (2014).

[5] Y. M. Stakhira, Sens. elektron. mikrosist. tehnol. 14(4), 27 (2017).

[6] Y. Stakhira, R. Stakhira, Sens. elektron. mikrosist. tehnol. 13(4), 44 (2016).

[7] A. Z. Abasova, R. S. Madatov, A. I. Nadzhafov, M. R. Hazanfarov, Prikladnaya fizika, (5), 112 (2011).

[8] K. Mimura, K. Wakita, M. Arita, N. Mamedov, G. Orudzhev, Y. Taguchi, K. Ichikawa, H. Namatame, M. Taniguchi, J. Electron Spectrosc. Relat. Phenom. 156-158, 379 (2007).

[9] M.-H. Yu. Seyidov, A. P. Odrinskii, R. A. Suleymanov, E. Acar, T. G. Mammadov, V. B. Alieva, Phys. Solid State 56(10), 2028 (2014).

[10] G. E. Davydyuk, O. Yu. Khyzhun, A. H. Reshak, H. Kamarudin, G. L. Myronchuk, S. P. Danylchuk, A. O. Fedorchuk, L. V. Piskach, M. Yu. Mozolyuk, O. V. Parasyuk, Phys. Chem. Chem. Phys. 15(18), 6965 (2013).

[11] S. P. Danylchuk, G. L. Myronchuk, M. Yu. Mozolyuk, V. V. Bozhko, Semiconductors 50(1), 38 (2016).

[12] G. E. Davydyuk, M. Piasecki, O. V. Parasyuk, G. L. Myronchuk, A. O. Fedorchuk, S. P. Danylchuk, L. V. Piskach, M. Yu. Mozolyuk, N. AlZayed, I. V. Kityk, Opt. Mater. 35(12), 2514 (2013).

[13] V. A. Ivanov, V. F. Gremenok, E. P. Zaretskaya, O. N. Sergeeva, I. A. Viktorov, V. B. Zalesskiy, Opticheskie svoystva tonkih plenok Zn2-2xCuxInxSe2, prednaznachennyih dlya primeneniya v solnechnyih elementah. Sborn. tr. mezhdun. nauchn. konf. «Aktualnyie problemyi fiziki tverdogo tela», 26-28 oktyabrya 2005 g. (Minsk, 2005). S. 426.

[14] L. L. Kazmerski, C. C. Shien, Thin Sol. Films 41(1), 35 (1997).

[15] O. V. Novosad, V. V. Bozhko, I. V. Kityk, V. Vertelis, A. Nekrosius, V. Kazukauskas, Sens. elektron. mikrosist. tehnol. 12(1), 53 (2015).

[16] V. V. Serdyuk, G. G. Chemeresyuk, M. Terek, Fotoelektricheskie protsessyi v poluprovodnikah (Vyisshaya shkola, Kiev-Odessa, 1982).

[17] Richard H. Bube. Photoelectronic Properties of Semiconductors (Cambridge University Press, Cambridge, 1992).

[18] Peter T. Landsberg, Recombination in Semiconductors (Cambridge University Press, Cambridge, 1991).

[19] N. D. Ismailov, Ch. I. Abilov, M. S. Gasanova, Semiconductors 51(5), 632 (2017).

[20] V. V. Bozhko, A. V. Novosad, G. E. Davidyuk, V. R. Kozer, O. V. Parasyuk, N. Vainorius, V. Janonis, A. Sakavičius, V. Kažukauskas, J. Alloys Comp. 553, 48 (2013).

[21] V. V. Bozhko, A. V. Novosad, G. E. Davidyuk, O. V. Parasyuk, V. R. Kozer, O. R. Gerasymyk, N. Vainorius, V. Janonis, A. Sakavicius, V. Kazukauskas, Semiconductors 48(3), 286 (2014).

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Published

2019-04-01

How to Cite

Novosad, O., Myronchuk, G., Danylchuk, S., Zamurueva, O., Piskach, L., Kityk, I., … Tsisar, O. (2019). Specific Features of Photoconductivity of Tl1-xIn1-xSnxSe2 Monocrystals at Low Temperatures: Array. Physics and Chemistry of Solid State, 20(1), 50–55. https://doi.org/10.15330/pcss.20.1.55

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Section

Review