Quantum Magnetoresistance of GaPAs Whiskers

A.A. Druzhinin; I.P. Ostrovskii; Y.M. Khoverko; N.S. Liakh-Kaguy; D.V. Chemerys

doi:10.15330/pcss.23.3.468-472

Authors

A.A. Druzhinin Lviv Polytechnic National University, Lviv, Ukraine
I.P. Ostrovskii Lviv Polytechnic National University, Lviv, Ukraine
Y.M. Khoverko Lviv Polytechnic National University, Lviv, Ukraine
N.S. Liakh-Kaguy Lviv Polytechnic National University, Lviv, Ukraine
D.V. Chemerys Lviv Polytechnic National University, Lviv, Ukraine

DOI:

https://doi.org/10.15330/pcss.23.3.468-472

Keywords:

GaPAs whiskers, magnetoresistance, metal-insulated transition, sensor, cryogenic temperatures

Abstract

The magnetoresistance of GaP_xAs_1-x (x = 0…0.45) whiskers with doping concentration of silicon in the range from the deep dielectric side of metal-insulated transition (~10¹⁷ сm^-3) to its critical concentration (N_c ~ 5´10¹⁸ сm^-3) at cryogenic temperatures of 4.2¸77 K and magnetic field induction of 0¸14 T was studied. A negative magnetic resistance (NMR) with maximum value of 7 % was found at temperature 4.2 K and magnetic field 4.5 T, which is dependent on magnetic field induction and current direction. The NMR absolute value reduces with increasing temperature was observed in the transverse and longitudinal magnetoresistance. The nature of the revealed NMR effect was discussed in the studied samples. There are four possible reasons of the NMR effect in the GaP_xAs_1-x whiskers such as the dimensional quantization, the magnetic ordering of electron spins or magnetic ordering due to uncontrolled magnetic dopant introduction and quantum interference of the electron wave function. The GaP_xAs_1-x whisker application as the temperature sensor was proposed due to the studied results of the temperature dependence of their conductivity.

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