Структурні особливості кристалів AgGaGe3Se8 легованих  Er, Dy та Nd

Editorial Board PCSS Journal; Taras Melnychuk; Halyna Myronchuk; Piotr Rakus; K. Ozga; Jaroslaw Jędryka; Oleg  Marchuk; Oleksandr Smitiukh; Volodymyr Yukhymchuk; Oksana Zamurueva

doi:10.15330/pcss.26.2.329-334

Authors

Taras Melnychuk Lesya Ukrainka Volyn National University, Lutsk, Ukraine
Halyna Myronchuk Lesya Ukrainka Volyn National University, Lutsk, Ukraine
Piotr Rakus Częstochowa Polytechnic University, Częstochowa, Poland
K. Ozga Częstochowa Polytechnic University, Częstochowa, Poland
Jaroslaw Jędryka Częstochowa Polytechnic University, Częstochowa, Poland
Oleg Marchuk Lesya Ukrainka Volyn National University, Lutsk, Ukraine
Oleksandr Smitiukh Lesya Ukrainka Volyn National University, Lutsk, Ukraine
Volodymyr Yukhymchuk V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine
Oksana Zamurueva Lesya Ukrainka Volyn National University, Lutsk, Ukraine

DOI:

https://doi.org/10.15330/pcss.26.2.329-334

Keywords:

alloying, rare-earth elements, crystal structure, Raman spectra

Abstract

In the work, the effect of changes of structural properties by doping with rare-earth metals (REM) (Nd, Dy, Er) of the AgGaGe₃Se₈ has been investigated. According to the results of the X-ray analysis, it is obvious that adding REM to the structure is the point of local distortion and stress, which manifests itself in the modification of diffraction reflections. Microstructural analysis based on SEM and EPMA confirmed the single-phase morphology and chemical homogeneity of the crystals within the analysis area. The presence of the basic structural unit of the (Ga,Ge)Se₄ tetrahedrons has been indicated by Raman Spectroscopy. Although rare-earth doping has little effect on the position of the fundamental vibrational modes, an increase in the intensity of individual bands is observed. The obtained results indicate that the key properties of the material are preserved after doping, which makes it possible to use such modified crystals in nonlinear optics and photonics devices, in particular where fine-tuning of the optical parameters is required.

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