The Kinetic Effects, Caused by Thickness Fluctuations of Quantum Semiconductor Wire

  • M.A. Ruvinskii Vasyl Stefanyk Precarpathian National University
  • O.B. Kostyuk Vasyl Stefanyk Prekarpathian University
  • B.M. Ruvinskii Vasyl Stefanyk Prekarpathian University
Keywords: semiconductor quantum wire, Gaussian fluctuations of thickness, electrical conductivity, thermopower, thermal conductivity

Abstract

It was theoretically determined the electrical conductivity, thermopower and thermal conductivity of semiconductor quantum wire conditioned by a random field of Gaussian fluctuations of wire thickness. We present the results for cases nondegenerate and generate statistics of carriers. The considered mechanism of relaxation of the carriers is essential for sufficiently thin and clean wire from the А3В5 and А4В6 type of semiconductors at low temperatures. The quantum size effects that are typical of quasi-one-dimensional systems were revealed.

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Published
2016-03-15
How to Cite
RuvinskiiM., KostyukO., & RuvinskiiB. (2016). The Kinetic Effects, Caused by Thickness Fluctuations of Quantum Semiconductor Wire. Physics and Chemistry of Solid State, 17(1), 7-10. https://doi.org/10.15330/pcss.17.1.7-10
Section
Scientific articles