The Kinetic Effects, Caused by Thickness Fluctuations of Quantum Semiconductor Wire
DOI:
https://doi.org/10.15330/pcss.17.1.7-10Keywords:
semiconductor quantum wire, Gaussian fluctuations of thickness, electrical conductivity, thermopower, thermal conductivityAbstract
It was theoretically determined the electrical conductivity, thermopower and thermal conductivity of semiconductor quantum wire conditioned by a random field of Gaussian fluctuations of wire thickness. We present the results for cases nondegenerate and generate statistics of carriers. The considered mechanism of relaxation of the carriers is essential for sufficiently thin and clean wire from the А3В5 and А4В6 type of semiconductors at low temperatures. The quantum size effects that are typical of quasi-one-dimensional systems were revealed.
References
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[2] H. Smith, H. Hojgaard, Transport Phenomena (University Press, Oxford, 1989).
[3] H. Bruns, K. Flensberg, H. Smith, , Phys. Rev. B, 48(15), 11144 (1993).
[4] M. A. Ruvіns'kij, B. M. Ruvіns'kij, FTP, 39(2), 247(2005).
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[6] A. I. Ansel'm, Vvedenie v teoriju poluprovodnikov (Nauka, Moskva, 1978).
[7] Dzh. Zajman, Principy teorii tvjordogo tela (Mir, Moskva, 1974).
[8] B. K. Ridley, Quantum Processes in Semiconductors (Clarendon Press, Oxford, 1999).
[9] J. Imri, Vvedenie v mezoskopicheskuju fiziku (Fizmatlit, Moskva, 2002).
[10] B. M. Askerov, Jelektronnye javlenija perenosa v poluprovodnikah (Nauka, Moskva, 1985).
[11] M. S. Svirskij, Jelektronnaja teorija veshhestva (Prosveshhenie, Moskva, 1980).
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Published
2016-03-15
How to Cite
Ruvinskii, M., Kostyuk, O., & Ruvinskii, B. (2016). The Kinetic Effects, Caused by Thickness Fluctuations of Quantum Semiconductor Wire. Physics and Chemistry of Solid State, 17(1), 7–10. https://doi.org/10.15330/pcss.17.1.7-10
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Scientific articles
