IR Photoinduced Piezoelectric Effects in Multi-Component Chalcogenides Ag2In(Ga)2Si(Ge)S(Se)6

Authors

  • G.L. Myronchuk Lesya Ukrainka Eastern European National University
  • O.V. Zamurujeva Lesya Ukrainka Eastern European National University
  • I.V. Kityk Lesya Ukrainka Eastern European National University

DOI:

https://doi.org/10.15330/pcss.20.4.401-405

Keywords:

chalcogenides, laser, photoinduced piezoelectric properties

Abstract

The influence of external irradiation of CO2, CO, Er:glass, Nd:YA lasers on the piezoelectric properties of the Ag2In(Ga)2Si(Ge)S(Se)6 crystals was investigated. The maximum photoinduced changes in the piezoelectric coefficient were observed after irradiation with CO2 laser. CO photoinducing bicolour beams with 5.5 μm wavelength cause at least 4 times smaller increase in piezoelectric coefficients. Therefore, it can be expected that the primary mechanisms cause the excitation of the phonon subsystem.

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Published

2019-12-15

How to Cite

Myronchuk, G., Zamurujeva, O., & Kityk, I. (2019). IR Photoinduced Piezoelectric Effects in Multi-Component Chalcogenides Ag2In(Ga)2Si(Ge)S(Se)6. Physics and Chemistry of Solid State, 20(4), 401–405. https://doi.org/10.15330/pcss.20.4.401-405

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Section

Scientific articles