Electron and hole spectrum taking into account deformation and polarization in the quantum dot heterostructure InAs/GaAs


  • H.Ya. Bandura Drohobych Ivan Franko State Pedagogical University, Drohobych, Ukraine
  • I.V. Bilynskyi Drohobych Ivan Franko State Pedagogical University
  • R.Ya. Leshko Drohobych Ivan Franko State Pedagogical University




exchange interaction, deformation, 4-band model or multiband hole model, 6-band model, polarization charges, strained heterosystem


In the paper InAs spherical quantum dots in a GaAs matrix were investigated. The energies of electrons and holes in single- and multi-band models (with strong, weak, and intermediate spin-orbit interaction) were calculated taking into account both the deformation of the quantum-dot matrix and the polarization charges on the quantum dot surface. The dependence of the energy levels of electrons and holes on the radius of the quantum dot is considered. It is shown that the deformation effects are stronger than polarization for the electron. For holes those effects are opposites. The energies of electrons and holes have been compared in all approximation models.


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How to Cite

Bandura, H., Bilynskyi , I., & Leshko , R. (2023). Electron and hole spectrum taking into account deformation and polarization in the quantum dot heterostructure InAs/GaAs. Physics and Chemistry of Solid State, 24(1), 146–152. https://doi.org/10.15330/pcss.24.1.146-152



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