Electrical conductivity and optical properties of annealed (As2S3)1-xAgx alloys
DOI:
https://doi.org/10.15330/pcss.27.2.372-381Keywords:
amorphous chalcogenides, DC and AC electric conductivity, optical absorption edge, refractive indexAbstract
The paper presents the results of study of physical properties of synthesised by melt quenching and thermally annealed (As2S3)1-xAgx (0.04 ≤ x ≤ 0.40) alloys depending on the silver content. Temperature dependences of the electric conductivity of the alloys under study measured in the 293 to 413 K range in the direct and alternate current (DC and AC) modes showed that the dominating mechanism is thermally activated charge-carrier hopping mediated by delocalised states in the tails close to the energy bandgap boundaries and localised states close to the Fermi level. Thermal activation energy for the alloy ionic conductivity estimated from the Arrhenius plots increases with silver content. For bulk (As2S3)1-xAgx samples with x = 0.30 and 0.40 AC electric conductivity studies revealed the presence of two components in the charge transfer mechanism due to specific features of their inhomogeneous structure. The effect of the increasing Ag content in the (As2S3)1-xAgx alloys on the optical absorption edge, energy bandgap, and refractive index dispersion in the visible and infrared ranges is studied. For thermally annealed alloys with high Ag content the optical bandgap shrinks and the refractive index increases.
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